Product Summary

The IRFZ44VSTRLPBF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized IRFZ44VSTRLPBF design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRFZ44VSTRLPBF absolute maximum ratings: (1)Continuous Drain Current, VGS @ 10V, ID @ TC = 25℃: 55A; (2)Continuous Drain Current, VGS @ 10V, ID @ TC = 100℃: 39A; (3)Pulsed Drain Current, IDM: 220A; (4)Power Dissipation, PD @TC = 25℃: 115W; (5)Linear Derating Factor: 0.77 W/℃; (6)Gate-to-Source Voltage, VGS: ± 20V; (7)Single Pulse Avalanche Energy, EAS: 115mJ; (8)Avalanche Current, IAR: 55A; (9)Repetitive Avalanche Energy, EAR: 11mJ; (10)Peak Diode Recovery dv/dt, dv/dt: 4.5V/ns.

Features

IRFZ44VSTRLPBF features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)Dynamic dv/dt Rating; (4)175℃ Operating Temperature; (5)Fast Switching; (6)Fully Avalanche Rated; (7)Optimized for SMPS Applications.

Diagrams

IRFZ44VSTRLPBF simplified diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRFZ44VSTRLPBF
IRFZ44VSTRLPBF
International Rectifier
MOSFET N-CH 60V 55A D2PAK
Data Sheet
1-800: $0.57
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRFZ10
IRFZ10
Vishay/Siliconix
MOSFET N-Chan 60V 10 Amp
Data Sheet
0-680: $0.95
680-1000: $0.94
1000-2000: $0.91
2000-5000: $0.89
IRFZ10, SiHFZ10
IRFZ10, SiHFZ10
Other

Data Sheet
Negotiable 
IRFZ10PBF
IRFZ10PBF
Vishay/Siliconix
MOSFET N-Chan 60V 10 Amp
Data Sheet
0-1: $1.01
1-10: $0.80
10-100: $0.67
100-250: $0.59
IRFZ14
IRFZ14
Vishay/Siliconix
MOSFET N-Chan 60V 10 Amp
Data Sheet
0-730: $0.89
730-1000: $0.85
1000-2000: $0.83
2000-5000: $0.82
IRFZ14, SiHFZ14
IRFZ14, SiHFZ14
Other

Data Sheet
Negotiable 
IRFZ14L
IRFZ14L

MOSFET N-CH 60V 10A TO-262
Data Sheet
0-650: $0.47